2sj652 no.7625-1/7 features ? on-resistance r ds (on)1=28.5m (typ.) ? input capacitance ciss=4360pf (typ.) ? 4v drive speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss --60 v gate-to-source voltage v gss 20 v drain current (dc) i d --28 a drain current (pulse) i dp pw 10 s, duty cycle 1% --112 a allowable power dissipation p d 2.0 w tc=25c 30 w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 343 mj avalanche current *2 i av --28 a note : * 1 v dd =--30v, l=500 h, i av =--28a (fig.1) * 2 l 500 h, single pulse package dimensions unit : mm (typ) 7529-001 51612qa tkim tc-00002759/72503 tsim ta-4245 sanyo semiconductors data sheet 2sj652 p-channel silicon mosfet general-purpose switching device applications http:// semicon.sanyo.com/en/network ordering number : en7625a product & package information ? package : to-220f-3sg ? jeita, jedec : sc-67 ? minimum packing quantity : 50 pcs./magazine marking electrical connection 1 3 2 j652 lot no. 1 : gate 2 : drain 3 : source sanyo : to-220f-3sg 10.16 0.8 15.87 12.98 3.3 6.68 3.23 1.47 max 15.8 4.7 2.54 2.76 123 0.5 2.54 2.54 3.18 ( 1.0) (0.84) detail-a a emc frame 2sj652-1e
2sj652 no.7625-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0v --60 v zero-gate voltage drain current i dss v ds =--60v, v gs =0v --1 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --1.2 --2.6 v forward transfer admittance | yfs | v ds =--10v, i d =--14a 18 26 s static drain-to-source on-state resistance r ds (on)1 i d =--14a, v gs =--10v 28.5 38 m r ds (on)2 i d =--14a, v gs =--4v 39 55.5 m input capacitance ciss v ds =--20v, f=1mhz 4360 pf output capacitance coss 470 pf reverse transfer capacitance crss 335 pf turn-on delay time t d (on) see fig.2 33 ns rise time t r 210 ns turn-off delay time t d (off) 310 ns fall time t f 180 ns total gate charge qg v ds =--30v, v gs =--10v, i d =--28a 80 nc gate-to-source charge qgs 15 nc gate-to-drain ?miller? charge qgd 12 nc diode forward voltage v sd i s =--28a, v gs =0v --0.96 --1.2 v fig.1 avalanche resistance test circuit fig.2 switching time test circuit ordering information device package shipping memo 2sj652-1e to-220f-3sg 50pcs./magazine pb free 50 50 rg 0v --10v v dd l 2sj652 d.c. 1% pw=10 s p. g 50 g s d i d = --14a r l =2.1 v dd = --30v v out 2sj652 v in 0v --10v v in
2sj652 no.7625-3/7 drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a it06535 gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a it06536 0 0 --50 --40 --30 --20 --10 --5.0 --4.5 --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 --50 --40 --30 --20 --10 0 --5.0 --4.5 --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 v gs = --3v tc=25 c --4v --6v --10v v ds = --10v tc= --25 c tc= --25 c 75 c 75 c 25 c 25 c it06540 diode forward voltage, v sd -- v i f -- v sd forward current, i f -- a --0.6 --0.9 --0.3 --1.2 --1.5 0 2 7 --0.01 --0.1 3 --1.0 --10 7 2 2 3 5 5 7 3 2 2 5 7 2 3 5 3 5 7 3 5 7 2 3 5 7 100 1.0 10 drain current, i d -- a it06539 --0.1 23 --1.0 57 2 3 57 2 --10 357 tc= --25 c 75 c 25 c v ds = --10v --25 c 25 c tc=75 c --0.001 drain-to-source voltage, v ds -- v ciss, coss, crss -- v ds ciss, coss, crss -- pf it06542 --0.1 --1.0 --10 25 3 5 723 drain current, i d -- a sw time -- i d switching time, sw time -- ns it06541 2 357 v gs =0v --10 -- 9 -- 8 -- 7 -- 6 -- 5 -- 4 -- 3 -- 2 70 60 50 40 30 20 10 0 150 125 100 75 50 25 0 --25 --50 gate-to-source voltage, v gs -- v r ds (on) -- v gs it06538 it06537 case temperature, tc -- c r ds (on) -- tc static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m i d = --14a, v gs = --4v i d = --14a, v gs = --10v 100 80 60 40 20 0 tc=75 c 25 c -- 2 5 c 5 7 100 3 10 2 2 7 3 5 t f t r v dd = --30v v gs = --10v t d (off) t d (on) 0 1000 5 7 2 3 5 2 7 3 100 --30 --10 --15 --20 --25 -- 5 f=1mhz ciss coss crss i d = --14a forward transfer admittance, | y fs | -- s | y fs | -- i d
2sj652 no.7625-4/7 drain-to-source voltage, v ds -- v drain current, i d -- a 80 70 60 50 40 30 20 10 0 --10 -- 9 -- 8 -- 7 -- 6 -- 5 -- 4 -- 3 -- 2 -- 1 0 it06559 v gs -- qg gate-to-source voltage, v gs -- v total gate charge, qg -- nc a s o --10 --100 --1.0 --0.1 23 57 23 57 23 57 --0.1 --1.0 --10 --100 2 3 5 7 3 2 5 7 2 3 2 3 5 7 it16830 i d = --28a i dp = --112a (pw 10 s) operation in this area is limited by r ds (on). 100 s 1 m s 10ms 100ms dc operation 10 s tc=25 c single pulse 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 p d -- ta allowable power dissipation, p d -- w it06545 ambient temperature, ta -- c allowable power dissipation, p d -- w case temperature, tc -- c it06544 p d -- tc 0 0 40 35 30 25 20 15 10 5 160 140 120 100 80 60 40 20
2sj652 no.7625-5/7 magazine speci cation 2sj652-1e
2sj652 no.7625-6/7 outline drawing 2sj652-1e mass (g) unit 1.8 * for reference mm
2sj652 ps no.7625-7/7 this catalog provides information as of may, 2012. speci cations and information herein are subject to change without notice. note on usage : since the 2sj652 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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